Effects of terbium concentrations on the characteristics of Ga2O3 films

Abstract This study investigates the incorporation of terbium (Tb) into Ga 2 O 3 films and its influence on their structural, optical, and luminescent properties. Tb doping composition in Ga 2 O 3 films was controlled by adjusting the Tb composition in the targets. X-ray diffraction analysis unveiled lattice expansion as Tb composition increased. Atomic force microscopy images depicted consistently smooth film surfaces across varying Tb compositions. Optical transmission spectra demonstrated high transmittance and direct bandgap transitions, with no notable alteration observed in the bandgap concerning Tb composition. Photoluminescence spectra exhibited characteristic Tb ion emission peaks, with intensities initially increasing before reaching a plateau, attributed to a balance between increased luminescent centers and deteriorated crystal quality. This study significantly enhances our understanding of Tb doping effects in Ga 2 O 3 films and offers valuable insights for their application in optoelectronics.