Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation

Diamond metal–oxide–semiconductor field-effect transistor (MOSFET) exhibited durable and stable dynamic switching characteristics at an unprecedentedly high voltage of −105 V. Switching turn-on and turn-off times were measured to be 7.64 and 4.93 ns, respectively, with a corresponding total switching loss of 20.03 pJ for a load resistance of 50 Ω. No Miller effect was observed due to the low Miller capacitance of 11 pF/mm. This study suggests the potentiality of diamond MOSFETs in prospective high-voltage, high-speed applications.