纳米孔
光电子学
砷化镓
计算机科学
材料科学
纳米技术
作者
Chenziyi Mi,Bingjun Li,Jin-Ho Kang,Rami T. ElAfandy,Supratik Dasgupta,Jung Han
标识
DOI:10.1109/islc57752.2024.10717362
摘要
The absence of a manufacturable distributed Bragg reflector (DBR) mirror that is compatible with the high-gain active region has been a major obstacle in the commercialization of short-wave infrared (SWIR) VCSELs. To address this, we propose a conductivity-selective electrochemical porosification process which led to the realization of high-index-contrast InP DBRs. Furthermore, continuous-wave (CW) operation of NP-InP VCSELs were demonstrated at both 1,380 and 1,550 nm from two separate structures with milli-watts output power.
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