ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics

The HfxZryO2 with high Zr content is demonstrated to form the anti-ferroelectric tetragonal phase (AFE t-phase). The peak dielectric constant (47) of Hf0.2Zr0.8O2 is achieved. By taking advantage of the high dielectric constant, the Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current. Stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per perimeter of $740~\mu \text{A}/\mu $ m at $\mathrm{V}_{\mathrm{OV}}= \mathrm{V}_{\mathrm{DS}}= 0.5\text{V}$ . The thermal budget is as low as 450 °C.