Ytterbium: Effect of Pressure and Temperature on Resistance
作者
R. A. Stager,H. G. Drickamer
出处
期刊:Science [American Association for the Advancement of Science] 日期:1963-03-29卷期号:139 (3561): 1284-1284被引量:6
标识
DOI:10.1126/science.139.3561.1284.a
摘要
The electrical resistance of ytterbium, measured as a function of pressure, shows a sharp maximum at 38 kb, both at 300°K and 77°K. At low pressures ytterbium is a metal because of overlap between filled and empty bands. From about 20 kb to the resistance maximum it is a semiconductor, indicating that the overlap disappears. At the maximum there is a phase transition, and beyond this pressure ytterbium is again metallic.