Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>

Ferroelectric thin films Bi 3.25 La 0.75 Ti 3 O 12 ,Bi 3.15 Nd 0.85 Ti 3 O 12 and Bi 3.15 (La 0.5 Nd 0.5 ) 0.85 Ti 3 O 12 of A-site substitution of Bi 4 Ti 3 O 12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi 3.25 La 0.75 Ti 3 O 12 、Bi 3.15 Nd 0.85 Ti 3 O 12 and Bi 3.15 (La 0.5 Nd 0.5 ) 0.85 Ti 3 O 12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.