Multilayer Vertical Stacked Capacitors (mvstc) for 64mbit and 256mbit Drams
作者
D. Temmler
标识
DOI:10.1109/vlsit.1991.705966
摘要
As DRAM cell size is being reduced, scaling stacked capacitor structures is becoming more difficult and process extensions to increase the storage area relative to the cell area have to be considered. Among the candidates being studied are horizontal 1) and vertical 2,3) multilayered capacitors.