材料科学
波导管
多晶硅耗尽效应
硅
多晶硅
硅光子学
光电子学
光学
光子学
光子集成电路
电气工程
晶体管
纳米技术
物理
工程类
电压
薄膜晶体管
图层(电子)
栅氧化层
作者
David N. Kwong,John Covey,Amir Hosseini,Yang Zhang,Xiaochuan Xu,Ray T. Chen
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2012-09-06
卷期号:20 (19): 21722-21722
被引量:33
摘要
. We then measure the propagation losses for various waveguide widths on both polysilicon and crystalline silicon platforms. We find that as the width increases for polysilicon waveguides, the propagation loss decreases similar to crystalline silicon waveguides. At a waveguide width of 10 µm, polysilicon and crystalline silicon waveguides have propagation losses of 0.56 dB/cm and 0.31 dB/cm, respectively, indicating there is little bulk absorption from the polysilicon and is the lowest propagation loss for polysilicon demonstrated to date. In addition, the first 1x12 polysilicon MMI is demonstrated with a low insertion loss of -1.29dB and a high uniformity of 1.07 dB. These results vindicate the use of polysilicon waveguides of varying widths in photonic integrated circuits.
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