期刊：Electronics Letters [Institution of Engineering and Technology] 日期：1987-01-02
标识
DOI：10.1049/el:19870040
摘要
A simple method is proposed to measure the hot-electron temperature, using an Au-GaAs Schottky barrier diode. The obtained temperature of electrons under the electric field of 500V/cm and 1100V/cm are 316K and 336K, respectively, while the samples are kept at room temperature.
PDF的下载单位、IP信息已删除
(2025-6-4)
cdercder
Copyright
无极微光
OK
CFD
Semy
lizishu
伶俐茗茗
乐空思
看不了一点文献
More
核桃
GingerF
arniu2008
东风
ww
Fellow_Lee
sagitar
空谷
eric888
皖公网安备34019202002308
