Single-frequency second-harmonic generation in a vertical external-cavity semiconductor laser

Summary form only given. Vertical external-cavity surface-emitting lasers (VECSELs) are attractive due to their potential for wavelength versatility, power scaling and spectrally/temporally controlled output. VECSELs based on InGaAs quantum wells with AlGaAs/GaAs Bragg reflectors have been employed in compact CW configurations for pumping of erbium fiber amplifiers, intracavity absorption spectroscopy and compact intracavity second-harmonic generation. Work employing GaAs quantum well structures to produce laser oscillation centered around 860 nm has shown that different material systems can be used to access other wave-lengths and that single-frequency operation can readily be achieved. We describe the intracavity second-harmonic generation of a single-frequency GaAs VECSEL.