硅
溅射
材料科学
扩散
光电子学
砷化镓
纳米技术
薄膜
物理
热力学
作者
C.L. Shieh,J. Mantz,E. Kohn
出处
期刊:Electronics Letters
[Institution of Engineering and Technology]
日期:1989-01-05
卷期号:25 (1): 32-33
被引量:1
摘要
A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.
科研通智能强力驱动
Strongly Powered by AbleSci AI