Designing nanosecond high voltage pulse generatorsusing power MOSFETs
作者
R. Jacob Baker,Scott Ward
出处
期刊:Electronics Letters [Institution of Engineering and Technology] 日期:1994-09-29卷期号:30 (20): 1634-1635被引量:26
标识
DOI:10.1049/el:19941126
摘要
Power MOSFETs in series are used for generating high voltage, >1 kV, pulses with nanosecond rise and fall times. The design procedures for series operation and driving power MOSFETs to attain nanosecond switching times are given. A –1500 V pulse generator is designed with a 3 ns falltime and a 15 ns risetime into a 50 Ω load.