Comprehensive Compact Phenomenological Modeling of Integrated Metal-Oxide Memristors

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data, collected on several hundred devices. Model describes the average devices' I-V characteristics as well as their spatial (device-to-device) and temporal variations. Both static and dynamic equations are explicit, computationally inexpensive, and suitable for SPICE modeling. The model's predictive power is validated using experimental data, while its utility by simulating image compression and image classification applications, two practical representative applications of mixed-signal memristor-based hardware.