各向异性
磁化
铁磁性
交换偏差
自旋电子学
磁晶各向异性
磁矩
作者
Po-Hao Chang,Wuzhang Fang,Taisuke Ozaki,Kirill D. Belashchenko
出处
期刊:arXiv: Materials Science
日期:2020-08-07
被引量:1
标识
DOI:10.1103/physrevmaterials.5.054406
摘要
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is 0.17 and $-0.07$ pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively, which is comparable to the Fe$\vert$MgO interface. The combination of a widely tunable magnetic anisotropy energy and a sizeable voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.
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