结晶度
存水弯(水管)
扩散
材料科学
电荷(物理)
载流子
聚合物
钥匙(锁)
化学工程
化学物理
纳米技术
光电子学
化学
复合材料
物理
计算机科学
热力学
计算机安全
工程类
量子力学
气象学
作者
Qiushi Ruan,Mustafa K. Bayazit,Kiran Vankayala,Jijia Xie,Yiou Wang,Junwang Tang
摘要
We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C3N4 film was determined to be ca. 1000 nm.
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