High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C

Single‐crystalline (100) diamond films are grown using hot‐filament chemical vapor deposition at 3000 °C for the first time, which is achieved using tantalum filaments. A high growth rate of 10 μm h −1 is achieved, which is ≈50 times faster than that achieved at 2000 °C. The Raman spectrum of the diamond film grown at high rate shows a peak at 1333 cm −1 with a full‐width at half‐maximum of 2.8 cm −1 , which is comparable with that of the seed substrate (2.7 cm −1 ). The surfaces of grown films are smooth, without hillocks or nonepitaxial crystallites.