材料科学
电容器
肖特基势垒
光电子学
异质结
肖特基二极管
电容
扩散电容
宽禁带半导体
电压
氮化镓
电气工程
电极
纳米技术
化学
图层(电子)
二极管
物理化学
工程类
作者
Tian-Li Wu,Benoit Bakeroot,Hongbin Liang,Niels Posthuma,Shuzhen You,Nicolò Ronchi,Steve Stoffels,Denis Marcon,Stefaan Decoutere
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2017-12-01
卷期号:38 (12): 1696-1699
被引量:76
标识
DOI:10.1109/led.2017.2768099
摘要
In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we have observed that the C-V behavior depends on the different processing conditions of the p-GaN gate. Second, a two-junction capacitor model considering a series connection of the Schottky metal/p-GaN junction capacitor and the AlGaN barrier capacitor is proposed to explain this C-V behavior. Based on this model, the junction capacitance has an influence on the total capacitance value under a high gate bias due to the Schottky metal/p-GaN junction. Furthermore, the Mg-concentration and hole density can be extracted. The extracted hole density is consistent with the results obtained by Hall measurements.
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