A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

This paper presents a 0.13μm 64Mb HfOxReRAM for embedded storage in IoT device. The configurable ramped voltage write and low read-disturb sensing techniques are proposed to address the reliability challenges in ReRAM. Experimental results show that, the ReRAM chip achieves more than 107 cycles' endurance and 10 years' retention at 75°C. In addition, its full function and superior random write performance are demonstrated on a developed evaluation board.