X射线光电子能谱
材料科学
图层(电子)
聚萘二甲酸乙二醇酯
基质(水族馆)
化学工程
聚对苯二甲酸乙二醇酯
原子层沉积
阻挡层
氧化物
二次离子质谱法
等离子体
介质阻挡放电
分析化学(期刊)
离子
纳米技术
化学
复合材料
色谱法
有机化学
电介质
光电子学
冶金
工程类
地质学
物理
海洋学
量子力学
作者
Hyun Gi Kim,Jong Geol Lee,Sung Soo Kim
标识
DOI:10.1016/j.orgel.2017.07.030
摘要
Aluminum oxide (Al2O3) layers were deposited on various polymeric substrates by a low frequency plasma-enhanced atomic layer deposition (PEALD) process. Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and polyethersulfone (PES) were tested as substrates for barrier films. Each substrate has its own characteristics to have influences on the Al2O3 layer formation and penetration into the substrate, which greatly affected the barrier properties. Prior to the deposition process, polymeric substrates were pretreated in argon and oxygen plasmas, and surface energy was leveled up due to the formation of polar group. Characterizations of the Al2O3 layer by Time of Flight - Secondary Ion Mass Spectrometry (ToF-SIMS) revealed that plasma treatment lowered the level of OH− in Al2O3 layer. X-ray photoelectron microscopy (XPS) confirmed that A12p peak of Al2O3 layer was shifted to a higher core level by plasma treatment. Density of the layer on the plasma treated surface was greater than that of untreated surface. It was found that plasma treatment of the surface had significant effects on the formation of the Al2O3 layer, which much improved the barrier performance. Optical transmittance was little affected by plasma treatment and PEALD process. After oxygen plasma pretreatment, the WVTR of the Al2O3 layer deposited on the plasma-treated PEN substrate was around 7.2 × 10−4 g/m2day, which is significantly lower than that of the untreated substrate.
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