Integrated Fast-Recovery SGT-SBR Devices with Majority Carrier Modulation During Wide Temperature Range

In this paper, an integrated device (SGT-SBR) of SGT MOSFET and Super Barrier Rectifier (SBR) in place of discrete SGT and discrete freewheel diode was put forward to fulfill the majority carrier regulation for sub element of SBR obtaining a 49.5% reduction in reverse recovery charge$(Q_{rr})$and a 42% decrease in FOM$\left(R_{D S(o n)} \times Q_{r r}\right)$I, compared to conventional SGT MOS devices. For the majority carrier regulation model, its current-temperature square-law relationship and low forward voltage$(V_{F})$with 0.3 V lower than that of parasitic body diode in traditional SGT, result in a slower variation of current with temperature under both forward conduction and reverse recovery states, leading to a more uniform carrier distribution. The temperature coefficient$\mu$of$Q_{rr}$for SGT-SBR about 0.007 nC/K is merely 7.6% of that for SGT MOS. On the other hand, an equivalent power consumption model of integrated device to circuit was established to evaluate quantitatively, showing that SGT-SBR exhibits above 16% reduction in SGT-SBR power loss compared to SGT MOS during a broad temperature. Therefore, the SGT-SBR as combined SGT, is a promising device in advanced application and topology of power integration due to lower power loss and higher power density.