数据库管理
CMOS芯片
乘数(经济学)
电气工程
功率(物理)
材料科学
光电子学
物理
工程类
放大器
量子力学
宏观经济学
经济
作者
Hyeongjin Kim,Hyohyun Nam,Seong-Kyun Kim,Dae‐Young Lee
标识
DOI:10.1109/lmwt.2024.3394880
摘要
This article presents a $D$ -band $\times$ 6 frequency multiplier in 28-nm bulk CMOS. It consists of a balanced doubler, a differential tripler, and several amplifiers to increase conversion gain and output power. In order to generate stable output tones despite low-input power, an input amplifier with two common-source (CS) stages and a doubler with active load-based p-type MOSFET (pMOS) diode connection are implemented. As a result, the multiplier operates stably from $-$ 27 dBm input level. The measured output power and peak conversion gain are 5.5 dBm and 29.5 dB, respectively. A 15 GHz 3-dB bandwidth is measured with input power of $-$ 20 dBm. The implemented frequency multiplier consumes 107.1 mW with 0.9 V of supply voltage, and the area including pads is 0.42 mm $^{2}$ .
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