A review of gallium oxide-based power Schottky barrier diodes

Abstract Gallium oxide (Ga 2 O 3 ) is a representative of ultra-wide bandgap semiconductors, with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent physical and chemical stability, Ga 2 O 3 has a theoretical breakdown electric field strength of more than 8 MV cm −1 , which is 27 times more than that of Si and about twice as large as that of SiC and GaN. It is guaranteed that Ga 2 O 3 has irreplaceable applications in ultra-high-power (1–10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga 2 O 3 , the full Ga 2 O 3 -based bipolar devices face more difficulties, and the unipolar Ga 2 O 3 power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progress and important achievements of the state-of-the-art Ga 2 O 3 -based power Schottky barrier diodes, and provide staged guidance for the further development of Ga 2 O 3 power devices. Multiple types of device architectures, including basic structure, edge terminal processing, field-plated, trench and heterojunction p–n structure, will be discussed in detail.