Resistive switching of two-dimensional Ag2S nanowire networks for neuromorphic applications

Randomly assembled networks of nanowires (NWs) can display complex memristive behaviors and are promising candidates for use as memory and computing elements in neuromorphic applications due to device fault tolerance and ease of fabrication. This study investigated resistive switching (RS) in two-dimensional, self-assembled silver sulfide (Ag2S) NW networks first experimentally and then theoretically using a previously reported stochastic RS model. The simulated switching behavior in these networks showed good correlation with experimental results. We also demonstrated fault-tolerance of a small NW network that retained RS property despite being severely damaged. Finally, we investigated information entropy in NW networks and showed unusual dynamics during switching as a result of self-organization of the memristive elements. The results of this work provide insights toward physical implementation of randomly assembled RS NW networks for reservoir and neuromorphic computing research.