响应度
硫化铅
材料科学
光电子学
量子点
光电探测器
红外线的
制作
近红外光谱
比探测率
光电二极管
半导体
纳米技术
光学
物理
病理
医学
替代医学
作者
Zhenhua Sun,Jinhua Li,Feng Yan
摘要
Highly sensitive near-infrared (NIR) phototransistors based on poly(3-hexylthiophene) (P3HT) and lead sulfide quantum dots (PbS QDs) were fabricated by a solution process. The phototransistors show high responsivity up to 2 × 104 A W−1 under NIR illumination with wavelength of 895 nm, which is much bigger than that of the photodetectors based on PbS QDs or organic semiconductors only. The sensing mechanism is attributed to the photo-induced electrons generated in the PbS QDs, which increase the threshold voltage of the transistor. These phototransistors may find promising applications as infrared sensors for their high responsivity, easy fabrication, low cost and flexibility.
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