Nb Doping Effects on Structures and Properties of PZT Thick Films Prepared by Polymer-Assisted MOD Process

Undoped and Nb doped PZT thick films according to the formula Pb 1 − x/2 [(Zr 0.52 Ti 0.48 ) 1 − x Nb x ]O 3 (x = 0, 0.02, 0.04, 0.06) with thickness of 1–5 μ m have been prepared by polymer poly(vinyl acetate) (PVAc)-assisted metal-organic thermal decomposition (MOD) process. Nb is introduced in the PZT thick films as a donor dopant to improve the electrical properties of PZT thick films. The Nb-doping effects on structures and properties of PZT thick films have been investigated. Our results reveal that the dielectric constant increases with Nb doping and reaches to a maximum value of 1776 at 4 at.% of Nb doping. The remnant polarization of Nb doped PZT films decreases. Meanwhile, the dielectric loss and the coercive field decrease slightly with Nb doping content.