光电导性
材料科学
光激发
量子阱
光电子学
电子
激发态
兴奋剂
原子物理学
凝聚态物理
分子物理学
光学
物理
量子力学
激光器
作者
Wilson Yeung-Sy Su,Ching Wang,Chih-Ting Chen,Bu-Wei Huang,Chunyi Li,Chii-Bin Wu,Jyh-Shyang Wang,Ji‐Lin Shen,Kuan–Cheng Chiu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-01-11
卷期号:32 (14): 145708-145708
标识
DOI:10.1088/1361-6528/abd438
摘要
Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well (QW) structure is commonly adopted as one of the core elements in modern electric and optoelectronic devices. Here, the time dependent photoconductivity spectra along the active InGaAs QW channel in a dual and symmetric Si δ-doped AlGaAs/InGaAs/AlGaAs QW structure are systematically studied under various temperatures (T = 80-300 K) and various incident photon energies (E in = 1.10-1.88 eV) and intensities. In addition to positive photoconductivity, negative photoconductivity (NPC) was observed and attributed to two origins. For T = 180-240 K with E in = 1.51-1.61 eV, the trapping of the photo-excited electrons by the interface states located inside the conduction band of InGaAs QW layer is one of the origins for NPC curves. For T = 80-120 K with E in = 1.10-1.63 eV, the photoexcitation of the excess 'supersaturated' electrons within the active InGaAs QW caused by the short cooling process is another origin.
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