发光二极管
光电子学
氮化镓
二极管
材料科学
激光器
能量(信号处理)
铟镓氮化物
计算机科学
光学
物理
纳米技术
量子力学
图层(电子)
标识
DOI:10.1109/nusod.2019.8807089
摘要
Gallium-nitride-based superluminescent light-emitting diodes (SLEDs) are attractive light sources for augmented or virtual reality devices and other applications. However, the energy efficiency of SLEDs is still far below the peak values reported for LEDs and laser diodes. Utilizing advanced numerical device simulation, this paper investigates the internal physical processes that cause the low SLED efficiency.
科研通智能强力驱动
Strongly Powered by AbleSci AI