Progress in Research of GaN-Based Light-Emitting Diodes

Presently GaN-based light-emitting diodes(LEDs) are the most important devices in application of solid-state lighting and display;however,there are still some difficulties in fully developing their potentials.We have made significant and creative contributions to altering the reality that the internal quantum efficiency of blue LEDs is fairly low and there are no simple and effective methods to fabricate white LEDs,.Blue LED with coupled wide and narrow quantum wells is designed,which is proved to have greatly elevated the internal quantum efficiency.By inserting an InGaN underlying layer,the strain state and localization effect of the quantum wells is modulated,and consequently a single-chip white LED,which emits white light in the same active layer,is obtained.