Two Dimensional Analytical Potential Modeling of Nanoscale Fully Depleted Metal Gate Double Gate MOSFET

In this paper, a 2D analytical potential modeling of nanoscale Double Gate MOSFET is carried out through evaluation of center and surface potential. An analytical expression of 2D potential for asymmetric double gate MOSFET and symmetric double gate MOSFET with ultra thin body (UTB) with the consideration of boundary value approach problem based on the physics of the device has been developed. The center and surface potential model is developed analytically in this paper which is valid below threshold voltage. The post threshold characteristics has been done using ATLAS simulator. Further, in this paper with the proper gate workfunction engineering, we have modeled the 2D potential for midgap semiconductor with workfunction of gate material as 4.61 eV and for Metal Gate Double Gate MOSFET, Hf as a gate metal with buffer layer AIN x with the workfunction of the gate material as 4.4 eV. Quantum corrections are applied for potential modeling as well as threshold voltage modeling. Further, the variation of gate to gate and source to drain potential is carried out. For the purpose of verification and validation of our proposed model, we have compared and contrasted the results obtained through our model and the results obtained through 2D ATLAS device simulator. A close match is obtained between the two, thus validating the approach followed is our analytical model.