Sol-gel dip-coating technique for preparation of ITO thin film

The ITO(Indium tin oxide) thin films were prepared by sol-gel method on the quartz glass slices to be clipped by a lab-scale dip-coating equipment. The structure properties and the physical properties (electrical resistance and transmittance) of the films were investigated by XRD, SEM, IR four-probe method and UV-VIS spectrometer. The experimental results indicate the possibility to prepare transparent and conductive ITO films by sol-gel dip-coating technique. The resistance and transmissivity of films is related to the tin atoms volume to be adulterated, dip-coating speed, heat treatment temperature, et al. The resistance of the ITO films is 110Ω/□ and the transmissivity is above 90% at the visible light area when tin atoms content in the sample is 12.5%(mass fraction), the dip-coating speed is 80mm/min and the heat treatment temperature is 550℃ in the technique condition. It will be convenient for preparation of large area ITO films by sol-gel dip-coating technology in low cost.