Boron redistribution at the oxide–silicon interface during drive-in in oxidising atmospheres

A modified form of the Kato and Nishi solution for computing boron redistribution at the moving oxide–silicon interface is presented, its advantages are discussed, and its accuracy is checked by extensive boron drive-in experiments carried out in oxidising atmospheres. A segregation coefficient k = 4, practically not influenced by either the boron-doping concentration or the silicon-oxidation rate, is suggested.