A 6 GHz-15 GHz 2 watts GaN MMIC

A wide-band GaN monolithic microwave integrated circuit (MMIC) has been developed for power amplifiers. Reactively matched techniques were employed for the design of our GaN MMIC. The MMIC consists of two-stage GaN high electron mobility transistors (HEMT). The gate periphery of driver and power GaN HEMTs is determined 0.5 mm and 1.0 mm, respectively. The developed GaN MMIC provides 2 watts output power over 6 GHz to 15 GHz with small signal gain of 12 dB. The results show the developed GaN MMIC has a capability of replacing GaAs MMICs.