材料科学
放电等离子烧结
兴奋剂
微晶
热导率
晶界
掺杂剂
分析化学(期刊)
电阻率和电导率
凝聚态物理
烧结
光电子学
复合材料
冶金
微观结构
电气工程
化学
工程类
物理
色谱法
作者
Yuexing Chen,Zhen‐Hua Ge,Meijie Yin,Dan Feng,Xueqin Huang,Wenyu Zhao,Jiaqing He
标识
DOI:10.1002/adfm.201602652
摘要
P‐type polycrystalline SnSe and K 0.01 Sn 0.99 Se are prepared by combining mechanical alloying (MA) and spark plasma sintering (SPS). The highest ZT of ≈0.65 is obtained at 773 K for undoped SnSe by optimizing the MA time. To enhance the electrical transport properties of SnSe, K is selected as an effective dopant. It is found that the maximal power factor can be enhanced significantly from ≈280 μW m −1 K −2 for undoped SnSe to ≈350 μW m −1 K −2 for K‐doped SnSe. It is also observed that the thermal conductivity of polycrystalline SnSe can be enhanced if the SnSe powders are slightly oxidized. Surprisingly, after K doping, the absence of Sn oxides at grain boundaries and the presence of coherent nanoprecipitates in the SnSe matrix contribute to an impressively low lattice thermal conductivity of ≈0.20 W m −1 K −1 at 773 K along the sample section perpendicular to pressing direction of SPS. This extremely low lattice thermal conductivity coupled with the enhanced power factor results in a record high ZT of ≈1.1 at 773 K along this direction in polycrystalline SnSe.
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