Vertical van der Waals Integrated p‐W0.09Re0.91S2 /GaN Heterojunction for Ultra‐High Detectivity UV Image Sensing

Abstract The relentless advancement of van der Waals (vdW) heteroepitaxy technology has charted an expansive horizon for the integration and functionalization of heterogeneous materials. In this research, a 2D/3D vdW heterojunction photodetector based on p‐W 0.09 Re 0.91 S 2 /n‐GaN integrated on a Free‐standing (FS)‐GaN substrate, encompassing horizontal, quasi‐vertical, and vertical structures is have successfully fabricated. By incorporating a suite of performance enhancement strategies, including mixed‐dimensional stacking, p‐type doping, type‐II band alignment, and vertical structure design, the developed vertical structure photodetector has exhibited exceptional performance. Specifically, the detector achieves a high Responsivity of up to 497.60 A W −1 , an impressive specific Detectivity of 8.41 × 10 13 Jones, and a fast response speed (rise/decay time of 10 ms/20 ms). Additionally, the device is successfully applied in the realm of single‐pixel imaging, substantiating its potential for practical applications. The findings of this work not only signify notable strides in integration and optoelectronic performance within the optoelectronic device domain but also portend novel breakthroughs in imaging technology applications, bestowing renewed vigor and endless potential upon the evolution of this field.