Homoepitaxial growth of Ge doped β-gallium oxide thin films by mist chemical vapor deposition

Abstract This study demonstrated homoepitaxial growth of Ge-doped β -Ga 2 O 3 thin films on β -Ga 2 O 3 substrates via mist chemical vapor deposition (CVD) using GeI 4, a water-soluble Ge precursor. The carrier concentration of the Ge-doped β -Ga 2 O 3 thin films was controlled by varying the Ge precursor concentration in the solution. A mobility of 66 cm 2 V −1 s −1 was obtained at a carrier density of 3.4 × 10 18 cm −3 using oxygen carrier gas. X-ray diffraction (XRD) scans 2 θ - ω revealed that homoepitaxial Ge-doped β -Ga 2 O 3 thin films were grown on β -Ga 2 O 3 without phase separation. However, the XRD rocking curves revealed that the mist CVD- grown Ge-doped β -Ga 2 O 3 was degraded compared to the substrate as the Ge concentration increased. The surface morphologies of the Ge-doped β -Ga 2 O 3 exhibited atomically flat surfaces with a root mean square roughness of less than 1 nm. These results indicate that the Ge-doped β -Ga 2 O 3 thin films prepared by mist chemical vapor deposition are promising for device applications.