钙钛矿(结构)
发光二极管
二极管
材料科学
量子点
电子
光电子学
电子迁移率
量子效率
化学
物理
结晶学
量子力学
作者
Shichen Yuan,Tao Fang,Jing Huang,Xiansheng Li,Changting Wei,Yihui Zhou,Yan Li,Xin Zheng,Jinhai Huang,Jianhua Su,Gleb V. Baryshnikov,Wallace C. H. Choy,Haibo Zeng,Xu Bai
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2023-01-03
卷期号:8 (1): 818-826
被引量:23
标识
DOI:10.1021/acsenergylett.2c02596
摘要
One of the great challenges in perovskite quantum dot light-emitting diodes (Pe-QLEDs) is the unbalanced charge injection that significantly hinders the device performance and stability. Herein, we tailor-made a high mobility electron-transporting material (ETM), named B2, to balance the carrier injection in blue Pe-QLEDs. B2 with a tailored asymmetric anthracenyl structure exhibits a promising electron mobility of 2.7 × 10–4 cm2·V–1·s–1, which is almost 20 times higher than the commonly used ETM-TPBi (1.1 × 10–5 cm2·V–1·s–1). Subsequently, sky blue (490 nm) Pe-QLED with B2 as the ETM presented a remarkably high external quantum efficiency (EQE) of 13.17% and a low turn-on voltage of 2.2 V, which is much better than that of the TPBi-based device (EQE of 8.31% and Vturn-on of 3.2 V). In addition, B2 also demonstrated a universal application in green and deep blue Pe-QLEDs. This work provides an important guidance to rational design of high electron mobility ETMs for high-performance LEDs.
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