Valleytronics公司
极化(电化学)
阴极发光
激发
光电子学
光子学
异质结
激子
相干控制
材料科学
物理
光学
激光器
凝聚态物理
自旋电子学
化学
发光
铁磁性
量子力学
物理化学
作者
Li Zheng,Zhixin Liu,Donglin Liu,Xingguo Wang,Yu Liu,Meiling Jiang,Feng Lin,Han Zhang,Bo Shen,Xing Zhu,Yongji Gong,Zheyu Fang
标识
DOI:10.1038/s41467-020-20545-x
摘要
Abstract Valley pseudospin in transition metal dichalcogenides monolayers intrinsically provides additional possibility to control valley carriers, raising a great impact on valleytronics in following years. The spin-valley locking directly contributes to optical selection rules which allow for valley-dependent addressability of excitons by helical optical pumping. As a binary photonic addressable route, manipulation of valley polarization states is indispensable while effective control methods at deep-subwavelength scale are still limited. Here, we report the excitation and control of valley polarization in h-BN/WSe 2 /h-BN and Au nanoantenna hybrid structure by electron beam. Near-field circularly polarized dipole modes can be excited via precise stimulation and generate the valley polarized cathodoluminescence via near-field interaction. Effective manipulation of valley polarization degree can be realized by variation of excitation position. This report provides a near-field excitation methodology of valley polarization, which offers exciting opportunities for deep-subwavelength valleytronics investigation, optoelectronic circuits integration and future quantum information technologies.
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