空位缺陷
硫黄
材料科学
费米能级
带隙
价(化学)
Atom(片上系统)
电导率
准费米能级
化学物理
凝聚态物理
原子物理学
价带
化学
电子
物理化学
物理
光电子学
冶金
嵌入式系统
量子力学
有机化学
计算机科学
标识
DOI:10.1142/s1793604717500679
摘要
Sulfur vacancy-induced charge carrier trap is quite important for improving the insulating characteristic of Li 2 S. In this work, we apply the first-principle calculations to investigate the influence of sulfur intrinsic vacancy and sulfur vacancy concentration on the structure and conductivity of Li 2 S. Sulfur intrinsic vacancy is dynamically stable. Importantly, sulfur vacancy reduces the band gap of Li 2 S. The calculated band gap of sulfur intrinsic vacancy is 0.700[Formula: see text]eV. We suggest that the removed sulfur atom leads to Li-2[Formula: see text] state shift from conduction band to Fermi level and improves the charge overlap between the top of valence band (VB) and the bottom of conduction band (CB). The strong charge interaction of Li pairing atoms forms the Li–Li metallic bond. Finally, we predict that sulfur vacancy gives rise to the insulator to metal transition of Li 2 S. Our works open up a new possibility for improving the conductivity of Li 2 S.
科研通智能强力驱动
Strongly Powered by AbleSci AI