化学机械平面化
钨
溶解
吡啶甲酸
材料科学
金属
冶金
化学
抛光
物理化学
有机化学
作者
Kangchun Lee,Jihoon Seo
出处
期刊:Applied sciences
[Multidisciplinary Digital Publishing Institute]
日期:2022-01-24
卷期号:12 (3): 1227-1227
被引量:6
摘要
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm semiconductor applications. However, excessive tungsten dissolution during the CMP process that results from high oxidizer concentrations and acidic atmospheres results in poor tungsten topography. In this study, we report a novel strategy to improve the tungsten topography by suppressing tungsten dissolution via coordination complex formations between picolinic acid and tungsten oxide. With 1.5 wt% picolinic acid for the inhibitor, the dissolution rate of tungsten was dramatically attenuated, and improved topography with a Ra value of 7.8 nm were demonstrated while validating CMP removal rate.
科研通智能强力驱动
Strongly Powered by AbleSci AI