Hot-electron noise limitations in submillimetre-wave Schottky-barrier mixer diodes

The noise from small-area platinum gallium-arsenide Schottky-barrier mixer diodes has been measured at 4 GHz, to compare high-field (hot-electron) noise in diodes with different doping densities and anode areas. In the present state of technology, submillmmetre-wavelength mixer diodes should be fabricated from gallium arsenide with a doping density of about 1017 cm−3.