About theI–V characteristic of metal-porous silicon diodes

The room temperature current/voltage (I–V) characteristics of several porous silicon(PS)/metal diodes are measured. Different metals are used to form the contacts. Severe stress is also applied to the diodes and the I–V characteristics of stressed diodes are analysed. The present study supports the description of Ben Chorin et al. of these diodes, where the rectifying junction is placed at the interface between the PS layer and the bulk Si and the carrier transport through the PS layer is determined by a hopping mechanism.