Integration of inverted InGaAs MSM array on Si substrate through low temperature wafer bonding

An array of inverted InGaAs metal–semiconductor–metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In–Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 µm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM measured prior to bonding while the dark current reduces slightly after bonding.