AlGaN–GaN–AlInGaN induced base transistor

We have simulated an induced base transistor based on n-type GaN–AlGaN–GaN–AlInGaN heterostructure with a thin AlGaN emitter barrier and a thin GaN quantum well base. Our simulations show that such a majority carrier device should have a high collector current density, a low base resistance, a high current gain, and is expected to be a viable competitor to GaN-based heterostructure bipolar junction transistors.