Mitigation of soft errors in resistive switching random-access-memories

The single-event-effect (SEE) response of 1T1R resistive switching random-access-memories (RRAMs) is examined. Two-photon-absorption laser experiments and simulation results indicate that soft errors can occur in RRAMs due to energetic particles striking the access transistor. Bit upset only occurs when the RRAM is in its high resistance state. An optimized 2T1R RRAM structure is proposed as an effective mitigation technique for soft errors. Advantages and disadvantages of the proposed method are estimated.