硫系化合物
带隙
化学
限制
红外线的
非线性光学
光电子学
硫化物
非线性系统
非线性光学
工作(物理)
化学物理
纳米技术
硫系玻璃
硫化铅
直接和间接带隙
宽禁带半导体
合理设计
硫族元素
红外光谱学
光子带隙
原子电子跃迁
作者
Yu‐Xuan Zhang,Jiang-Hui Fan,Zhen-Cheng Wu,Shao-Peng Gui,Mao‐Yin Ran,Sheng‐Ping Guo
标识
DOI:10.1021/acs.inorgchem.6c03836
摘要
Abstract Transition-metal chalcogenides have emerged as promising infrared nonlinear optical (NLO) materials due to their favorable d–s, d–p, and d–f transitions that can enhance NLO response. However, the concomitant d–d transitions in transition-metal centers often induce undesired bandgap narrowing, severely limiting their practical applications. Herein, a new Eu-based transition-metal sulfide, EuMn6Ga6S16 (EMGS), has been successfully synthesized by a high-temperature solid-state reaction. Notably, the [MnS6] units effectively suppress the undesirable d–d transitions while preserving the beneficial d–p transitions for NLO activity, thereby mitigating the bandgap-narrowing effect commonly observed in transition-metal chalcogenides. Consequently, EMGS exhibits a phase-matchable second-harmonic generation response and the widest bandgap (2.82 eV) among Eu-based chalcogenide NLO materials. Theoretical calculations further reveal that the bandgap is predominantly governed by the synergistic contribution of both [MnS6] and [GaS4] units, whereas the NLO performance is mainly attributed to the [MnS6] units. This work not only provides a viable strategy for mitigating the adverse effects of d–d transitions through rational structural design but also expands the family of Eu-based chalcogenides for infrared NLO applications, paving the way for the development of new NLO materials with a wide bandgap.
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