钝化
材料科学
光致发光
光电子学
猝灭(荧光)
激光器
量子产额
辐照
光热治疗
纳米晶
表面状态
量子点
纳米技术
镉
硫化镉
光学
量子效率
宽禁带半导体
产量(工程)
作者
Huan Liu,Puning Wang,Rui Duan,Zhiyuan Ren,Handong Sun,Tianmin He,R C Chen
标识
DOI:10.1021/acs.jpclett.5c02899
摘要
The surface passivation of quasi-two-dimensional CdSe nanoplatelets (NPLs) is crucial for increasing their application potential in optoelectronic devices. While previous methods mainly focused on the passivation of vertical surfaces, effective passivation of lateral surface defects remains challenging. Herein, quasi-symmetric CdSe/CdSeS core/crown NPLs have been successfully synthesized, achieving complete lateral surface passivation through a uniform CdSeS crown. Laser spectroscopic analysis revealed that these CdSe/CdSeS core/crown NPLs exhibited a near-unity (98.89%) photoluminescence (PL) quantum yield with single-exponential PL decay dynamics. Furthermore, the dual effects of prolonged laser irradiation on NPLs have been observed, namely, the PL enhancement due to the photothermal passivation of cadmium vacancies and PL quenching caused by the new formation of cadmium vacancies through photoinduced ligand dissociation. Then, low-threshold whispering gallery mode microlasers were constructed with a SiO2 microsphere. This study provides critical insights into defect dynamics and opens up avenues for advanced applications of optoelectronic devices.
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