Anomalous CuCrP2S6/WSe2 interface enabled two‐dimensional programmable homojunction for self‐powered photodetection and complex optoelectronic logics

Abstract Ferroelectric materials hold great potential for modulating two‐dimensional (2D) materials to achieve electrically tunable homojunction (ETH). However, ETH based on conventional ferroelectrics encounters significant challenges attributed to the surface with dangling bonds and the associated depolarization field. Here, we introduce a novel 2D ETH device based on the anomalous interfacial effect between 2D layered ferroelectric CuCrP 2 S 6 and ambipolar WSe 2 , creating a versatile platform for nonvolatile memory and high‐performance optoelectronic applications. The device capitalizes on the realization of ETH through a localized doping strategy facilitated by ferroelectric polarization‐assisted charge trapping. When modulated to a p–n junction diode, the device showcases superior rectifying characteristics and high‐performance self‐powered photodetection, with a highest responsivity over 0.14 A·W −1 . Moreover, the nonvolatile ETH device enables a single device to implement complex optoelectronic logics of exclusive OR (XOR), OR, and not implication (NIMP) that can be reconfigured by light illumination. Compared to the traditional CMOS‐based logics, the ETH device significantly reduces the transistor number by 87.5%, 83.3%, and 87.5% for XOR, OR, and NIMP, respectively. The successful demonstration of the ETH device based on 2D ferroelectric materials paves the way for the development of advanced and simplified photo‐electric interconnected circuits. image