Atomic scale DFT based investigation of tuning and quantum modulation of zinc blende ZnS bandgap for next-generation materials

)) dielectric function and electron energy loss (ELS)) display field-dependent behavior, signifying the potential of ZnS as a tunable optoelectronic material. These findings validate the feasibility of electric-field-controlled engineering of ZnS properties, paving the way for exciting advancements in the controlled functionalities in semiconductors to design innovative next-generation optoelectronic and photonic devices.