First Demonstration of Annealing-Free RT-Prepared AlScN Film with Large Polarization ($2 \mathrm{P}_{\mathrm{r}}>300 \mu \mathrm{C} / \text{cm}^{2}$) and Ultra-Sharp $\mathrm{E}_{\mathrm{c}}$ Distribution for 0T1C FeRAM

Selector-free 0T1C FeRAM requires ferroelectric (FE) films with high polarization ($2 P_{\mathrm{r}}$) and sharp coercive field ($E_{\mathrm{c}}$) distribution. In this work, we present the first demonstration of a 1kb 0T1C FeRAM based on the optimized AlScN FE film, through electrode engineering and interface optimization. An annealing-free room-temperature (RT)-prepared AlScN epitaxial film with high-quality (001) orientation is achieved, resulting in a large $2 P_{\mathrm{r}}>300 \mu \mathrm{C} / \text{cm}^{2}$ and an ultra-sharp $E_{\mathrm{c}}$ distribution (record $\alpha$ of 0.045). The sharp $E_{\mathrm{c}}$ allows superior disturb immunity under the $\mathrm{V}_{\text{dd}} / 2$ read scheme for array operations, even at an elevated 300°C. Furthermore, our circuit model proposes that the optimized AlScN FE film can support much larger array size compared to other ferroelectrics, thanks to its enhanced $2 P_{\mathrm{r}}$ and sharper $E_{\mathrm{c}}$ distribution. This work underscores the great potential of AlScN-based FE films for high-capacity emerging memory technologies.