记忆电阻器
人工神经网络
桥(图论)
人工智能
计算机科学
物理神经网络
记忆晶体管
工程类
人工神经网络的类型
电气工程
时滞神经网络
电阻随机存取存储器
医学
内科学
电压
作者
Zelin Cao,Bai Sun,Guangdong Zhou,Shuangsuo Mao,Shouhui Zhu,Jie Zhang,Chuan Ke,Yong Zhao,Jinyou Shao
出处
期刊:Nanoscale horizons
[Royal Society of Chemistry]
日期:2023-01-01
卷期号:8 (6): 716-745
被引量:117
摘要
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial neural network technology is expected to break through the limitation of von Neumann so as to realize the replication of the human brain by enabling strong parallel computing ability and efficient data processing and become an important way towards the next generation of artificial intelligence. A new type of nanodevice, namely memristor, which is based on the variability of its resistance value, not only has very important applications in nonvolatile information storage, but also presents obsessive progressiveness in highly integrated circuits, making it one of the most promising circuit components in the post-Moore era. In particular, memristors can effectively simulate neural synapses and build neural networks; thus, they can be applied for the preparation of various artificial intelligence systems. This study reviews the research progress of memristors in artificial neural networks in detail and highlights the structural advantages and frontier applications of neural networks based on memristors. Finally, some urgent problems and challenges in current research are summarized and corresponding solutions and future development trends are put forward.
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